Sensitivity of the a-Si:H/c-Si structure to alcohol vapors

The change in the contact potential difference (CPD) due to ethanol vapor adsorption by a-Si:H/c-Si structure is measured by Kelvin’s method. The measurements are carried out in dry nitrogen ambient and temperature in the interval 20–100 °C. Two types of electrically active adsorption are establishe...

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Bibliographic Details
Published in:Sensors and actuators. B, Chemical Chemical, 2002-02, Vol.82 (2), p.180-185
Main Authors: Sueva, D., Georgiev, S.S., Iliev, L., Nedev, N., Toneva, A.
Format: Article
Language:English
Subjects:
Alcohol
Sensitivity
Vapor
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Summary:The change in the contact potential difference (CPD) due to ethanol vapor adsorption by a-Si:H/c-Si structure is measured by Kelvin’s method. The measurements are carried out in dry nitrogen ambient and temperature in the interval 20–100 °C. Two types of electrically active adsorption are established—reversible and nonreversible. The reversible ethanol vapor adsorption onto the a-Si:H surface creates positively charged states at 1.1 eV above the Fermi level. The obtained results show that the a-Si:H/c-Si structure can be used for fabrication of alcohol vapor sensors such as open gate field effect transistors (FET).
ISSN:0925-4005
1873-3077
DOI:10.1016/S0925-4005(01)01004-8