Humidity sensitive field effect transistors

A new device, named humidity sensitive field effect transistors (HUSFETs), for integrated humidity sensors has been fabricated using conventional silicon microtechnology. The insulator structure of this HUSFETs is TiO 2/Si 3N 4SiO 2 and the water molecular permeable electrode is thin porous gold. Th...

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Bibliographic Details
Published in:Sensors and actuators. B, Chemical Chemical, 1996-09, Vol.35 (1), p.80-84
Main Authors: Lee, Sung Pil, Park, Kun-Joo
Format: Article
Language:English
Subjects:
Analytical chemistry
Chemistry
Exact sciences and technology
General equipment and techniques
General, instrumentation
Humidity sensitive field effect transistors
Hygrometers
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Physics
Threshold voltages
Titanium oxide
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Summary:A new device, named humidity sensitive field effect transistors (HUSFETs), for integrated humidity sensors has been fabricated using conventional silicon microtechnology. The insulator structure of this HUSFETs is TiO 2/Si 3N 4SiO 2 and the water molecular permeable electrode is thin porous gold. The fabricated devices showed typical enhancement mode characteristics and the threshold voltage was about 2.7 V in 60% RH. It can be seen that the threshold voltages of HUSFET decreased from 3.0 to 2.4 V and the drain current increased from 208 to 464 μA according to increasing relative humidities from 30 to 90%. The sensitivity of HUSFET is 3.2 μA/RH, when the drain and gate voltages are constant.
ISSN:0925-4005
1873-3077
DOI:10.1016/S0925-4005(96)02018-7