Preparation of nickel oxide thin films for gas sensors applications

Nickel oxide (NiO) thin films were prepared by dc reactive magnetron sputtering from a nickel metal target in an Ar+O 2 mixed atmosphere in two sputtering modes. The oxygen content in the gas mixture varied from 15% to 45%. The films prepared in the oxide-sputtering mode were amorphous while the fil...

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Bibliographic Details
Published in:Sensors and actuators. B, Chemical Chemical, 1999-09, Vol.57 (1), p.147-152
Main Authors: Hotovy, I, Huran, J, Spiess, L, Hascik, S, Rehacek, V
Format: Article
Language:English
Subjects:
Gas sensors
Nickel oxide
Thin films
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Summary:Nickel oxide (NiO) thin films were prepared by dc reactive magnetron sputtering from a nickel metal target in an Ar+O 2 mixed atmosphere in two sputtering modes. The oxygen content in the gas mixture varied from 15% to 45%. The films prepared in the oxide-sputtering mode were amorphous while the films in metal-sputtering mode exhibited polycrystalline (fcc) NiO phase. In this case TEM observations showed a dense fine-grained structure with the grain size in the range 4–10 nm and AFM micrograph showed a rough surface with RMS=2.21 nm. We have found that good NiO stoichiometric films are obtainable with a polycrystalline (fcc) structure at 40% oxygen content in the metal-sputtering mode.
ISSN:0925-4005
1873-3077
DOI:10.1016/S0925-4005(99)00077-5