Microdefects and nonstoichiometry level in GaAs:Si/GaAs films grown by liquid-phase epitaxy method

GaAs:Si/GaAs films heavily doped with Si were investigated by complex methods including X-ray diffractometrical measurement of diffraction maximum integral intensity for a quasi-forbidden reflection of the continuous spectrum wavelengths permitting determination of defect structure parameters, i.e....

Full description

Saved in:
Bibliographic Details
Published in:Journal of alloys and compounds 2001-10, Vol.328 (1), p.218-221
Main Authors: Klad’ko, V.P, Datsenko, L.I, Zytkiewicz, Z, Bak-Misiuk, J, Maksimenko, Z.V
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Exact sciences and technology
Experimental determination of defects by diffraction and scattering
GaAs
Nonstoichiometry
Physics
Si/GaAs films
Spectrometry
Structure of solids and liquids
crystallography
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:GaAs:Si/GaAs films heavily doped with Si were investigated by complex methods including X-ray diffractometrical measurement of diffraction maximum integral intensity for a quasi-forbidden reflection of the continuous spectrum wavelengths permitting determination of defect structure parameters, i.e. mean radius and concentration of precipitates and chemical composition violation (level of nonstoichiometry), as well as second ion mass spectroscopy (SIMS), measurements of electrophysical parameters. The level of nonstoichiometry was shown to depend on parameters of defect structure. The conclusion was drawn about interaction on point defects with precipitates enriched with silicon atoms.
ISSN:0925-8388
1873-4669
DOI:10.1016/S0925-8388(01)01297-X