X-ray diffuse scattering from extended microdefects of orthorhombic symmetry for Si single crystals

The displacement field of a crystal lattice, in the continuous media approximation, caused by extended microdefects of rectangular parallelepiped shape, is considered. X-ray diffuse scattering from the defect core as well as the long-range displacement field is analyzed. A theoretical expression for...

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Bibliographic Details
Published in:Journal of alloys and compounds 1999-05, Vol.286 (1), p.250-253
Main Authors: Borowski, Janusz, Gronkowski, Jerzy
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Exact sciences and technology
Experimental determination of defects by diffraction and scattering
Extended defects
Orthorhombic symmetry
Physics
Structure of solids and liquids
crystallography
X-ray diffuse scattering
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Summary:The displacement field of a crystal lattice, in the continuous media approximation, caused by extended microdefects of rectangular parallelepiped shape, is considered. X-ray diffuse scattering from the defect core as well as the long-range displacement field is analyzed. A theoretical expression for the intensity of X-ray diffuse scattering resulting from randomly distributed microdefects of orthorhombic symmetry is presented using the kinematical approximation of X-ray statistical diffraction theory. The computer simulations of the isointensity contours for two sets of defect parameters are performed. A way of obtaining the defect parameters by fitting the computer simulations to the experimental data is proposed.
ISSN:0925-8388
1873-4669
DOI:10.1016/S0925-8388(98)01015-9