Redistribution of Be in InGaAsP layers grown by GSMBE during post-growth annealing

In this work we present results of beryllium diffusion during the post-growth rapid thermal annealing at 700–900°C in InGaAsP layers grown by GSMBE. The experimental structure consist of a 2000 Å Be-doped layer (3×10 19 cm –3) In 0.73Ga 0.27As 0.58P 0.42 layer sandwiched between 5000 Å undoped In 0....

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Bibliographic Details
Published in:Journal of alloys and compounds 1999-06, Vol.285 (1), p.L1-L4
Main Authors: Ketata, K, Ketata, M, Koumetz, S, Marcon, J
Format: Article
Language:English
Subjects:
Beryllium
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Diffusion
Diffusion in solids
Diffusion of impurities
Exact sciences and technology
GSMBE
Impurities: concentration, distribution, and gradients
Impurity concentration, distribution, and gradients
InGaAsP
Physics
Structure of solids and liquids
crystallography
Transport properties of condensed matter (nonelectronic)
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Summary:In this work we present results of beryllium diffusion during the post-growth rapid thermal annealing at 700–900°C in InGaAsP layers grown by GSMBE. The experimental structure consist of a 2000 Å Be-doped layer (3×10 19 cm –3) In 0.73Ga 0.27As 0.58P 0.42 layer sandwiched between 5000 Å undoped In 0.73Ga 0.27As 0.58P 0.42 layers. A kick-out model of the substitutional-interstitial diffusion mechanism, which involves neutral Be interstitial species and positively charged group III self-interstitials, is proposed to explain the observed SIMS depth profiles.
ISSN:0925-8388
1873-4669
DOI:10.1016/S0925-8388(99)00012-2