Electrical characterization of CVD diamond–n + silicon junctions

The electrical characteristics of CVD-diamond/n +-Si heterojunction devices are reported. Below 250 K the diodes show an unusual inversion of their rectification properties. This behavior is attributed to an enhanced tunneling component due to interface states, which change their occupation with the...

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Bibliographic Details
Published in:Diamond and related materials 2001-03, Vol.10 (3), p.858-862
Main Authors: Rodrigues, A.M., Gomes, H.L., Stallinga, P., Pereira, L., Pereira, E.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
CVD diamond
Electrical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Heterojunction
Physics
Tunneling
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Summary:The electrical characteristics of CVD-diamond/n +-Si heterojunction devices are reported. Below 250 K the diodes show an unusual inversion of their rectification properties. This behavior is attributed to an enhanced tunneling component due to interface states, which change their occupation with the applied bias. The temperature dependence of the loss tangent shows two relaxation processes with different activation energies. These processes are likely related with two parallel charge transport mechanisms, one through the diamond grain, and the other through the grain boundary.
ISSN:0925-9635
1879-0062
DOI:10.1016/S0925-9635(00)00571-9