Magnetoresistance of boron-doped chemical vapor deposition polycrystalline diamond films

• Published in: Diamond and related materials 2002, Vol.11 (1), p.49-52
• Main Authors: Fei, Y.J, Yang, D, Wang, Xue, Meng, Q.B, Wang, Xuejin, Xiong, Y.Y, Nie, Y.X, Feng, Ke-an
• Format: Article
• Language: English
• Subjects: Boron-doped; Carrier mobility; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity phenomena in semiconductors and insulators; Electronic transport in condensed matter; Exact sciences and technology; Galvanomagnetic and other magnetotransport effects; Magnetoresistance; Physics; Polycrystalline
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/S0925-9635(01)00516-7

The electrical properties and magnetoresistance of boron-doped polycrystalline diamond films grown on p-typed Si (100) by hot filament chemical vapor deposition have been investigated. As the atomic boron concentration increases from 3×10 17 to 3×10 19 cm −3, and grain size from 5 to 15 μm, the quality of diamond is improved, which causes the carrier mobility μ and longitudinal magnetoresistance change rate Δρ ///ρ 0 to increase. For a magnetic field ( B) of 20 tesla and temperature 300 K, the longitudinal resistance change rate Δρ ///ρ 0 is up to 20%. Meanwhile, Δρ ///ρ 0 is proportional to μ 2 B 2 in a low field and proportional to μ 1.5 B in a high field. It is the first time that a result is obtained in a high field.