Direct fusion bonding of silicon to polycrystalline diamond

High temperature fusion of silicon to diamond is reported. Polished, randomly oriented diamond films and unpolished (100) highly oriented diamond films were bonded to single-side polished (100) silicon in a dedicated ultrahigh vacuum bonding apparatus. Direct bonding under an applied uniaxial stress...

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Bibliographic Details
Published in:Diamond and related materials 2002-03, Vol.11 (3-6), p.482-486
Main Authors: Wolter, S.D., Yushin, G.N., Okuzumi, F., Stoner, B.R., Prater, J.T., Sitar, Z.
Format: Article
Language:English
Subjects:
Applied sciences
Diamond thin films
Electronics
Exact sciences and technology
Fusion bonding
Microelectronic fabrication (materials and surfaces technology)
Microelectronics: LSI, VLSI, ULSI
integrated circuit fabrication technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon-on-diamond
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Summary:High temperature fusion of silicon to diamond is reported. Polished, randomly oriented diamond films and unpolished (100) highly oriented diamond films were bonded to single-side polished (100) silicon in a dedicated ultrahigh vacuum bonding apparatus. Direct bonding under an applied uniaxial stress of ∼32 MPa was observed at temperatures above 950°C. The bonded interface was examined by scanning acoustic microscopy revealing only partial bonding at fusion temperatures of 950 and 1050°C. In contrast, complete bonding was evidenced at 1150 and 1200°C, although cracking of the diamond films became more prominent at these higher fusion temperatures.
ISSN:0925-9635
1879-0062
DOI:10.1016/S0925-9635(01)00608-2