Silicon carbide Schottky and ohmic contact process dependence

The paper investigates the impact of temperature and other annealing conditions on experimental Schottky and ohmic characteristics of fabricated Ni/4HSiC and Ti/4HSiC Schottky diodes. The backside ohmic contact is always Ni/4HSiC. The ohmic contact characteristics greatly improve if the annealing...

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Bibliographic Details
Published in:Diamond and related materials 2002-03, Vol.11 (3-6), p.1258-1262
Main Authors: Badila, M., Brezeanu, G., Millan, J., Godignon, P., Banu, V.
Format: Article
Language:English
Subjects:
Applied sciences
Diodes
Electronics
Exact sciences and technology
Processing
Schottky diode
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon carbide (SiC)
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Summary:The paper investigates the impact of temperature and other annealing conditions on experimental Schottky and ohmic characteristics of fabricated Ni/4HSiC and Ti/4HSiC Schottky diodes. The backside ohmic contact is always Ni/4HSiC. The ohmic contact characteristics greatly improve if the annealing is performed at high temperature×time product. The measurements of Ni/4HSiC Schottky show a decrease of the Schottky barrier height when increasing the annealing temperature. In the case of the Ti–Schottky contacts, the lowest Schottky barrier height was obtained for diodes annealed into H2 ambient.
ISSN:0925-9635
1879-0062
DOI:10.1016/S0925-9635(01)00711-7