Relation between stress in cubic boron nitride films and the in-plane TO phonon energy

The high intrinsic stresses in as-deposited cBN films are relaxed, employing thermal treatment and ion implantation. In-situ stress measurement and ex-situ polarized infrared reflection spectroscopy are utilized to study the correlation between the stress and the cBN TO phonon energy. The in-plane T...

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Bibliographic Details
Published in:Diamond and related materials 2002-08, Vol.11 (8), p.1532-1536
Main Authors: Fitz, C, Fukarek, W, Möller, W
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Cubic boron nitride
Exact sciences and technology
Infrared
Mechanical and acoustical properties
Phonon
Physical properties of thin films, nonelectronic
Physics
Stress
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:The high intrinsic stresses in as-deposited cBN films are relaxed, employing thermal treatment and ion implantation. In-situ stress measurement and ex-situ polarized infrared reflection spectroscopy are utilized to study the correlation between the stress and the cBN TO phonon energy. The in-plane TO phonon energy of cBN films does not depend unambiguously on the film stress, in contrast to the dependence of the phonon energy of cBN crystallites on hydrostatic pressure. Factors affecting the relation between stress and phonon position are discussed.
ISSN:0925-9635
1879-0062
DOI:10.1016/S0925-9635(02)00058-4