Optical and electrical investigation of boron-doped homoepitaxial diamond

Conduction mechanism of boron-doped homoepitaxial diamond was investigated by means of Hall measurements and infrared-visible spectroscopy. Diamond films with various boron concentrations were grown by the microwave plasma-assisted CVD method. It is shown that owing to the strong interaction between...

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Bibliographic Details
Published in:Diamond and related materials 1997-04, Vol.6 (5), p.835-838
Main Authors: Ogasawara, A., Inushima, T., Shiraishi, T., Ohya, S., Karasawa, S., Shiomi, H.
Format: Article
Language:English
Subjects:
Boron-doped homoepitaxial diamond
Carrier concentration
Microwave plasma-assisted CVD
Optical electrical investigation
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Summary:Conduction mechanism of boron-doped homoepitaxial diamond was investigated by means of Hall measurements and infrared-visible spectroscopy. Diamond films with various boron concentrations were grown by the microwave plasma-assisted CVD method. It is shown that owing to the strong interaction between the hole and the optical phonon, the conduction mechanism changes from a valence-band conduction to an impurity-band conduction in a sample having a carrier concentration of more than 10 18 cm −3 at room temperatures.
ISSN:0925-9635
1879-0062
DOI:10.1016/S0925-9635(96)00722-4