Thermal properties of β-SiC epitaxial layers between 150 °C and 500 °C measured by using microstructures

The heat conductivity and the thermal diffusion velocity of LPCVD grown, nominally undoped epitaxial SiC layers on silicon were determined from 150 °C to 500 °C. A novel arrangement of micromachined SiC bridges was used to measure these quantities with little calculation effort. The thermal conducti...

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Bibliographic Details
Published in:Diamond and related materials 1997, Vol.6 (10), p.1338-1341
Main Authors: Wagner, C., Krötz, G.
Format: Article
Language:English
Subjects:
Heat diffusion
High temperature
SiC
Thermal conductivity
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Summary:The heat conductivity and the thermal diffusion velocity of LPCVD grown, nominally undoped epitaxial SiC layers on silicon were determined from 150 °C to 500 °C. A novel arrangement of micromachined SiC bridges was used to measure these quantities with little calculation effort. The thermal conductivity was derived from the temperature difference and the heat flow over a SiC micro bridge. The heat diffusion velocity was obtained from the phase shift between the temperature modulation induced at one side of the SiC micro bridge and detected at the other, respectively. The temperature distribution of the SiC microstructure was measured by a thermal imaging system.
ISSN:0925-9635
1879-0062
DOI:10.1016/S0925-9635(97)00109-X