On the properties of impurity bands generated in P-type homoepitaxial diamond

Electrical and optical investigations performed on boron-doped homoepitaxial diamonds reveal the presence of an impurity band when the carrier concentration is higher than 5 × 10 17 cm −3 at room temperatures. This band is mainly composed of an excited state of the impurity boron (0.35 eV) and its o...

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Bibliographic Details
Published in:Diamond and related materials 1998-06, Vol.7 (6), p.874-878
Main Authors: Inushima, Takashi, Ogasawara, Atsushi, Shiraishi, Tadashi, Ohya, Seishiro, Karasawa, Shiro, Shiomi, Hiromu
Format: Article
Language:English
Subjects:
Boron doping
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electrical conductivity
Electron states
Elemental semiconductors
Exact sciences and technology
Homoepitaxy
Impurity and defect levels
Photoconductivity
Physics
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Summary:Electrical and optical investigations performed on boron-doped homoepitaxial diamonds reveal the presence of an impurity band when the carrier concentration is higher than 5 × 10 17 cm −3 at room temperatures. This band is mainly composed of an excited state of the impurity boron (0.35 eV) and its optical phonon-sideband that is located at 0.51 eV. This impurity band explains the increases of Hall coefficient and Hall mobility when the temperature increases, and makes the diamond coloration blue.
ISSN:0925-9635
1879-0062
DOI:10.1016/S0925-9635(97)00317-8