Diamond tips and cantilevers for the characterization of semiconductor devices

Highly boron doped diamond tips on diamond cantilevers have been prepared by means of the moulding technique and been tested for applications in scanning probe microscopy measurements for the characterization of semiconductor devices. Tips doped with ca 1% boron show a resistivity of some 10 −3 Ωcm;...

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Bibliographic Details
Published in:Diamond and related materials 1999-03, Vol.8 (2), p.283-287
Main Authors: Malavé, A, Oesterschulze, E, Kulisch, W, Trenkler, T, Hantschel, T, Vandervorst, W
Format: Article
Language:English
Subjects:
Applications
Diamond films
Diamond tips
Scanning probe microscopy
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Summary:Highly boron doped diamond tips on diamond cantilevers have been prepared by means of the moulding technique and been tested for applications in scanning probe microscopy measurements for the characterization of semiconductor devices. Tips doped with ca 1% boron show a resistivity of some 10 −3 Ωcm; their radius of curvature is ca 20 nm. With respect to wear resistance, they are superior to either nitride probes also fabricated by the moulding technique or to tapping mode silicon tips. Finally, first measurements revealed the suitability of such probes for applications in scanning spreading resistance microscopy, scanning capacitance microscopy and nanopotentiometry measurements.
ISSN:0925-9635
1879-0062
DOI:10.1016/S0925-9635(98)00388-4