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Application of aluminum nitride films for electronic devices

AlN films were grown by RF-magnetron reactive sputtering of Al-target in Ar+N 2 gaseous mixture. In the dependence on deposition conditions the films may be from nearly amorphous to fine crystalline structure. The texture for crystalline AlN is typical. The application of AlN films as a protective c...

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Bibliographic Details
Published in:Diamond and related materials 1999-03, Vol.8 (2), p.369-372
Main Authors: Belyanin, A.F, Bouilov, L.L, Zhirnov, V.V, Kamenev, A.I, Kovalskij, K.A, Spitsyn, B.V
Format: Article
Language:English
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Summary:AlN films were grown by RF-magnetron reactive sputtering of Al-target in Ar+N 2 gaseous mixture. In the dependence on deposition conditions the films may be from nearly amorphous to fine crystalline structure. The texture for crystalline AlN is typical. The application of AlN films as a protective coating of thin-films thermoprinting devices; as a piezoelectric in devices based on surface acoustic waves and also as a material of cold cathodes is shown.
ISSN:0925-9635
1879-0062
DOI:10.1016/S0925-9635(98)00412-9