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Growth of diamond with Zr-containing molten metal solvents and metal elements as incorporated impurities

Single crystals of diamond were grown using high pressure–high temperature conditions in alloy solvents with Zr added as a nitrogen getter. Problems in the growth process caused by the Zr addition were observed. With a reaction container made of SiO 2 or SiO 2-based material, its nitrogen-gettering...

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Bibliographic Details
Published in:Diamond and related materials 1999-08, Vol.8 (8), p.1438-1440
Main Authors: Wakatsuki, Masao, Ohnishi, Akinobu, Jia, Xiaopeng, Kurosawa, Masanori, Sueno, Shigeo, Hayakawa, Shinjiro, Gohshi, Yohichi
Format: Article
Language:English
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Summary:Single crystals of diamond were grown using high pressure–high temperature conditions in alloy solvents with Zr added as a nitrogen getter. Problems in the growth process caused by the Zr addition were observed. With a reaction container made of SiO 2 or SiO 2-based material, its nitrogen-gettering ability was markedly decreased. MgO and Al 2O 3 were found to be suitable materials for the container to avoid this problem. Diamonds grown from Zr-containing solvents always had highly developed {111} facets. Zr of 3.8 wt.% in the solvent is sufficient to grow type 2-a diamond. Concentrations of Zr as impurity in single crystals of diamond grown in the Zr-containing solvents have been evaluated as of the order of 0.1 ppm.
ISSN:0925-9635
1879-0062
DOI:10.1016/S0925-9635(99)00043-6