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Growth of diamond with Zr-containing molten metal solvents and metal elements as incorporated impurities
Single crystals of diamond were grown using high pressure–high temperature conditions in alloy solvents with Zr added as a nitrogen getter. Problems in the growth process caused by the Zr addition were observed. With a reaction container made of SiO 2 or SiO 2-based material, its nitrogen-gettering...
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Published in: | Diamond and related materials 1999-08, Vol.8 (8), p.1438-1440 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Single crystals of diamond were grown using high pressure–high temperature conditions in alloy solvents with Zr added as a nitrogen getter. Problems in the growth process caused by the Zr addition were observed. With a reaction container made of SiO
2 or SiO
2-based material, its nitrogen-gettering ability was markedly decreased. MgO and Al
2O
3 were found to be suitable materials for the container to avoid this problem. Diamonds grown from Zr-containing solvents always had highly developed {111} facets. Zr of 3.8
wt.% in the solvent is sufficient to grow type 2-a diamond. Concentrations of Zr as impurity in single crystals of diamond grown in the Zr-containing solvents have been evaluated as of the order of 0.1
ppm. |
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ISSN: | 0925-9635 1879-0062 |
DOI: | 10.1016/S0925-9635(99)00043-6 |