Metal–insulator transition in boron-ion implanted type IIa diamond

Electrical conductivity measurements for selected boron-ion dopant concentrations have been made on type IIa diamond specimens in the temperature range 1.5–30 K. Samples have been implanted using the CIRA (cold implantation–rapid annealing) process, in which small implantation increments were used f...

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Bibliographic Details
Published in:Diamond and related materials 1999-08, Vol.8 (8), p.1508-1510
Main Authors: Tshepe, T., Prins, J.F., Hoch, M.J.R.
Format: Article
Language:English
Subjects:
Annealing
Conductivity
Ion implantation
Metal–insulator transition
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Summary:Electrical conductivity measurements for selected boron-ion dopant concentrations have been made on type IIa diamond specimens in the temperature range 1.5–30 K. Samples have been implanted using the CIRA (cold implantation–rapid annealing) process, in which small implantation increments were used followed by high-temperature annealing to achieve a significant reduction in the levels of implantation-induced radiation damage and to obtain maximum boron activation. Further post anneals at temperatures up to 1700°C were carried out. Using this procedure, we have recorded, for the first time, metallic conductivity behaviour in implanted surface layers in single-crystal diamond specimens with boron concentrations measured by secondary-ion mass spectrometry to be of the order of n=10 21 cm −3. The occurrence of a metal–insulator transition in this system is discussed.
ISSN:0925-9635
1879-0062
DOI:10.1016/S0925-9635(99)00066-7