Characterization of high open-circuit voltage double sided buried contact (DSBC) silicon solar cells

The double sided buried contact (DSBC) silicon solar cells have consistently shown high open-circuit voltages ( V oc) than its single sided buried contact counterpart because of better rear surface passivation. The rear surface passivation which is provided by the rear floating junction is effective...

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Bibliographic Details
Published in:Solar energy materials and solar cells 1997-02, Vol.45 (3), p.283-299
Main Authors: Ebong, A.U., Lee, S.H., Warta, W., Honsberg, C.B., Wenham, S.R.
Format: Article
Language:English
Subjects:
Bifacial
Buried contact
Double sided
Silicon
Solar cell
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Summary:The double sided buried contact (DSBC) silicon solar cells have consistently shown high open-circuit voltages ( V oc) than its single sided buried contact counterpart because of better rear surface passivation. The rear surface passivation which is provided by the rear floating junction is effective only when there is no leakage in the rear floating junction. However, the partial shunting of the rear floating junction can cause a drop in the fill factor of the cell which has been the only parameter limiting the realization of the structure's potentials. In this paper, LBIC (light beam induce current), spectral response, dark I- V and J sc- V oc measurements for DSBC cells have been carried out to help explain some of the experimentally observed attributes of this structure. The partly shunted rear floating junction has been identified by LBIC measurement as low current regions near the rear metal contacts.
ISSN:0927-0248
1879-3398
DOI:10.1016/S0927-0248(96)00081-5