Charge carrier transport in n–i–p and p–i–n a-Si/c-Si heterojunction solar cells

The regional approximation method, developed recently for the analysis of a p–i–n a-Si/c-Si heterojunction solar cell structure, is applied to simulate the internal operation and external characteristics of a n–i–p a-Si/c-Si cell. The derived closed-form solutions have equal basic forms. However, in...

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Bibliographic Details
Published in:Solar energy materials and solar cells 1998-05, Vol.53 (1), p.15-21
Main Authors: Furlan, J., Smole, F., Popović, P., Topič, M., Kamin, M.
Format: Article
Language:English
Subjects:
a-Si/c-Si heterojunction
Analytical modelling
Applied sciences
Energy
Exact sciences and technology
Natural energy
Photovoltaic conversion
Solar cells
Solar cells. Photoelectrochemical cells
Solar energy
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Summary:The regional approximation method, developed recently for the analysis of a p–i–n a-Si/c-Si heterojunction solar cell structure, is applied to simulate the internal operation and external characteristics of a n–i–p a-Si/c-Si cell. The derived closed-form solutions have equal basic forms. However, in as much as material parameter values in these two structures differ, also the calculated plots of output characteristics of p–i–n and n–i–p a-Si/c-Si cells are different. The dominant effects which influence the charge-carrier transport in both cells are mutually compared and discussed.
ISSN:0927-0248
1879-3398
DOI:10.1016/S0927-0248(98)00002-6