The simulation of charge transport in the nanostructure “Camel” and heterotransistors

Heterojunction bipolar GaAs transistor with AlGaAs emitter and Si-“Camel”-transistor were simulated using manyparticles method for hot electrons and stochastic dynamics method for equilibrium holes and electrons. Some transient processes were investigated at times of the order 10 −11 s. Dynamics of...

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Bibliographic Details
Published in:Nanostructured materials 1999, Vol.12 (1), p.373-376
Main Authors: Bugaev, A.S., Korshunov, S.M., Kuzmichev, S.D., Sorokoumov, V.E.
Format: Article
Language:English
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Summary:Heterojunction bipolar GaAs transistor with AlGaAs emitter and Si-“Camel”-transistor were simulated using manyparticles method for hot electrons and stochastic dynamics method for equilibrium holes and electrons. Some transient processes were investigated at times of the order 10 −11 s. Dynamics of transient processes is affected by electron space charge and unequipotentiality of base region.
ISSN:0965-9773
1872-9150
DOI:10.1016/S0965-9773(99)00138-5