On electron-electron scattering mechanisms in 2D degenerated systems

The detailed quantitative theory of electron-electron scattering processes in 2D electron degenerated systems in GaAs(AlGaAs) heterostructures has been developed on the basis of analytical treatment and numerical calculations. We have found the conditions and intervals of values of the characteristi...

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Bibliographic Details
Published in:Nanostructured materials 1999, Vol.12 (5), p.835-838
Main Authors: Buhmann, H., Gurzhi, R.N., Kalinenko, A.N., Kopeliovich, A.I., Molenkamp, L.W., Yanovsky, A.V.
Format: Article
Language:English
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Summary:The detailed quantitative theory of electron-electron scattering processes in 2D electron degenerated systems in GaAs(AlGaAs) heterostructures has been developed on the basis of analytical treatment and numerical calculations. We have found the conditions and intervals of values of the characteristic parameters in which specific properties of 2D relaxation predicted previously on the theoretical level manifest themselves. New effects, i.e. a secondary beam of electrons scattered back and a very narrow beam of holes moving in the direction of injection, have been found.
ISSN:0965-9773
1872-9150
DOI:10.1016/S0965-9773(99)00246-9