Influence of oxygen exposure on instabilities of perfluoropentacene transistor characteristics with different gate insulators

<正>Pentacene for p-channel organic field effect transistors（OTFTs） and perfluoropentacene for n-channel OTFTs have attracted strong attentions to be used as CMOS type organic semiconductor materials for flexible organic displays.n-channel OTFTs with different gate insulators of polyimi...

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Bibliographic Details
Published in:Progress in natural science 2011-02, Vol.21 (1), p.12-16
Main Authors: UEKI, Hideharu, YANO, Hiroaki, CAI, Li, OHUCHI, Hirokuni, TAKAYANAGI, Yutaro, DUAN, Zong-fan, NISHIOKA, Yasushiro
Format: Article
Language:English
Subjects:
exposure
gate
gate insulator
insulator
OTFT
oxygen
oxygen exposure
perfluoropentacene
polyimide
SiO2
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Summary:<正>Pentacene for p-channel organic field effect transistors（OTFTs） and perfluoropentacene for n-channel OTFTs have attracted strong attentions to be used as CMOS type organic semiconductor materials for flexible organic displays.n-channel OTFTs with different gate insulators of polyimide（PI） and SiO2 and perfluoropentacene as a semiconductor layer were fabricated,and their instability of the transistor characteristics measured in air,vacuum and oxygen was investigated.The results show that both of the transistors exhibit a significant increase of mobility when measured in vacuum.However,the mobility of the transistors is significantly reduced when measured in pure oxygen,and the threshold voltages continuously increase.These phenomena may be related to water diffusion into the perfluoropentacene/gate insulator interface in air and oxidation of perfluoropentacene in oxygen.
ISSN:1002-0071
DOI:10.1016/S1002-0071(12)60017-3