Utilization of optical and electrical peculiarities of partially compensated zinc selenide

Zinc selenide bulk crystals are doped with group III and group VII impurities (aluminum and iodine). Compensating A-center concentrations are controlled using a partial pressure equilibration technique. This facilitates a more flexible ‘adjustment’ of electrical transport properties and optical char...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2001-12, Vol.4 (6), p.601-605
Main Authors: Prokesch, M., Irmscher, K., Makino, H., Yao, T.
Format: Article
Language:English
Subjects:
Absorption
Doping
Ionization energy
Mobility
Self-activated
ZnSe
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Summary:Zinc selenide bulk crystals are doped with group III and group VII impurities (aluminum and iodine). Compensating A-center concentrations are controlled using a partial pressure equilibration technique. This facilitates a more flexible ‘adjustment’ of electrical transport properties and optical characteristics, which recently attracted attention for device application. Furthermore, advanced methods of point defect characterization can be applied.
ISSN:1369-8001
1873-4081
DOI:10.1016/S1369-8001(02)00026-4