Jet vapor deposition nitride processing and application to advanced CMOS devices for reduction of gate leakage current and boron penetration

The increase in gate leakage current and boron penetration are major problems for scaled gate dielectrics in advanced device technology. We have demonstrated, for the first time, reduction in gate leakage current and strong resistance to boron penetration when jet vapor deposition (JVD) nitride is u...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2000-06, Vol.3 (3), p.173-178
Main Authors: Tseng, H.-H, Veteran, J, Tobin, P.J, Mogab, J, Tsui, P.G.Y, Wang, V, Khare, M, Wang, X.W, Ma, T.P, Hobbs, C, Hegde, R, Hartig, M, Kenig, G, Blumenthal, R, Cotton, R, Kaushik, V, Tamagawa, T, Halpern, B.L, Cui, G.J, Schmitt, J.J
Format: Article
Language:English
Subjects:
Boron penetration
Gate leakage current
Jet vapor deposition
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Summary:The increase in gate leakage current and boron penetration are major problems for scaled gate dielectrics in advanced device technology. We have demonstrated, for the first time, reduction in gate leakage current and strong resistance to boron penetration when jet vapor deposition (JVD) nitride is used as a gate dielectric in an advanced CMOS process. JVD nitride provides a robust interface in addition to well behaved bulk properties, MOSFET characteristics and ring oscillator performance. Process optimization is discussed. Manufacturing issues remain to be addressed.
ISSN:1369-8001
1873-4081
DOI:10.1016/S1369-8001(99)00024-4