Scaling behavior of metal–insulator transitions in a Si/SiGe two dimensional hole gas

We report the temperature dependence of magnetotransport measurements in a Si/SiGe two-dimensional hole gas (2DHG) and we analyze the curves in terms of scaling. A reentrant insulating transition is observed at filling factor ν=1.5, followed by a second high field insulating phase at ν

Saved in:
Bibliographic Details
Published in:Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2002, Vol.12 (1), p.600-603
Main Authors: Possanzini, C., Ponomarenko, L., de Lang, D., de Visser, A., Olsthoorn, S.M., Fletcher, R., Feng, Y., Coleridge, P.T., Williams, R.L., Maan, J.C.
Format: Article
Language:English
Subjects:
Metal–insulator transition
Scaling
SiGe
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report the temperature dependence of magnetotransport measurements in a Si/SiGe two-dimensional hole gas (2DHG) and we analyze the curves in terms of scaling. A reentrant insulating transition is observed at filling factor ν=1.5, followed by a second high field insulating phase at ν
ISSN:1386-9477
1873-1759
DOI:10.1016/S1386-9477(01)00388-5