Magnetic-field enhancement of the current instability in field-effect transistors

A theoretical investigation, within the framework of hydrodynamics, is made of the plasma-wave instability mechanism in a two-dimensional electron fluid in a field-effect transistor in the presence of a perpendicular magnetic field B. Scattering by impurities and/or phonons, termed external friction...

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Bibliographic Details
Published in:Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2002, Vol.12 (1), p.482-486
Main Authors: Vasilopoulos, P., Kushwaha, M.S.
Format: Article
Language:English
Subjects:
Current-instability
Field-effect transistor
Terahertz frequencies
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Summary:A theoretical investigation, within the framework of hydrodynamics, is made of the plasma-wave instability mechanism in a two-dimensional electron fluid in a field-effect transistor in the presence of a perpendicular magnetic field B. Scattering by impurities and/or phonons, termed external friction, is accounted for by adding a damping term to the equation of motion. The treatment is valid for a nondegenerate electron fluid in which the mean free path for interelectronic collisions is much smaller than the device length and the mean free path due to impurities and/or phonons. We show that a relatively low DC current should be unstable because of magnetoplasma-wave amplification due to reflection from the device boundaries. As in the absence of the field B, the instability occurs for 0< v 0< s and v 0
ISSN:1386-9477
1873-1759
DOI:10.1016/S1386-9477(01)00395-2