Impact of exciton localization on cavity polaritons

Polariton emission was investigated in a GaAs-based microcavity (MC) under various excitation conditions which excite predominately hot excitons and carriers, localized excitons, or a mixed system. Strong differences have been found both in the intensity, the energy distribution, and the temperature...

Full description

Saved in:
Bibliographic Details
Published in:Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2002-03, Vol.13 (2), p.455-458
Main Authors: Kulakovskii, V.D, Tartakovskii, A.I, Krizhanovskii, D.N, Skolnick, M.S, Roberts, J.S
Format: Article
Language:English
Subjects:
Luminescence
Quantum wells
Semiconductors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Polariton emission was investigated in a GaAs-based microcavity (MC) under various excitation conditions which excite predominately hot excitons and carriers, localized excitons, or a mixed system. Strong differences have been found both in the intensity, the energy distribution, and the temperature dependence of the lower branch polariton (LP) emission for the different excitation conditions. In MCs with negative detuning, LP states are filled via relaxation of mobile excitons delocalized due to either thermal activation or interaction with hot carriers. In MCs with positive detuning, in contrast, the energy relaxation of photoexcited LPs is more effective whereas an additional above-band-gap excitation leads to a strong decrease of population at the LP band bottom.
ISSN:1386-9477
1873-1759
DOI:10.1016/S1386-9477(02)00162-5