On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers

It is shown that the electronic conduction in silicon-on-insulator layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconductor structures. The strong drop in resistivity and the critical concentration for the metal–insulator transition are consistent...

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Bibliographic Details
Published in:Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2002-03, Vol.13 (2), p.691-694
Main Authors: Brunthaler, G, Prinz, A, Pillwein, G, Bauer, G, Pudalov, V.M, Lindelof, P.E, Ahopelto, J
Format: Article
Language:English
Subjects:
Metal–insulator transition
Quantum interference
Silicon inversion layers
Silicon-on-insulator
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Summary:It is shown that the electronic conduction in silicon-on-insulator layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconductor structures. The strong drop in resistivity and the critical concentration for the metal–insulator transition are consistent. From the investigation of the magnetoresistance of the weak localization, it is seen that the strong resistivity drop occurs at high densities in the absence of phase coherence. This suggests the charged hole trap model and impurity screening to be the origin of the strong resistivity drop towards lower temperatures.
ISSN:1386-9477
1873-1759
DOI:10.1016/S1386-9477(02)00260-6