Photoluminescence characterization of air exposed AlGaAs surface and passivated ex situ by ultrathin silicon interface control layer

Using the photoluminescence surface state spectroscopy (PLS 3) technique, attempts were made to determine the surface state density ( N ss) distribution on Al x Ga 1− x As ( x≈0.3) surfaces passivated by the Si interface control layer (ICL) technique. Air-exposed AlGaAs epitaxial wafers which are te...

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Bibliographic Details
Published in:Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 1998-07, Vol.2 (1), p.261-266
Main Authors: Adamowicz, Boguslawa, Ikeya, Kengo, Mutoh, Morimichi, Saitoh, Toshiya, Fujikura, Hajime, Hasegawa, Hideki
Format: Article
Language:English
Subjects:
AlGaAs
Interface control layer
Passivation
Photoluminescence surface state spectroscopy
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Summary:Using the photoluminescence surface state spectroscopy (PLS 3) technique, attempts were made to determine the surface state density ( N ss) distribution on Al x Ga 1− x As ( x≈0.3) surfaces passivated by the Si interface control layer (ICL) technique. Air-exposed AlGaAs epitaxial wafers which are technologically important for fabrication of various devices were passivated ex situ by forming a SiO 2/Si 3N 4/Si ICL/AlGaAs structure after the HCl treatment and their photoluminescence behavior was investigated in detail. The result of the PLS 3 analysis indicated that Si ICL-based passivation reduces the minimum interface state density value down to 10 10 cm −2 eV −1 range. Some indication was also obtained that further improvements are possible by using electron cyclotron resonance (ECR)-enhanced N 2 plasma for Si 3N 4/Si ICL interface formation.
ISSN:1386-9477
1873-1759
DOI:10.1016/S1386-9477(98)00055-1