Far infrared response of InAs–GaSb type-II quantum dots

We have investigated theoretically the ground state and electromagnetic response of InAs–GaSb type-II quantum dots in the presence of a vertical magnetic field. The ground state is calculated within the Hartree approximation using a 2-band k· p effective mass Hamiltonian to represent the coupling be...

Full description

Saved in:
Bibliographic Details
Published in:Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2000-02, Vol.6 (1), p.466-469
Main Authors: Broido, D.A., Kempa, K., Rössler, U.
Format: Article
Language:English
Subjects:
Magneto optics
Quantum dots
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have investigated theoretically the ground state and electromagnetic response of InAs–GaSb type-II quantum dots in the presence of a vertical magnetic field. The ground state is calculated within the Hartree approximation using a 2-band k· p effective mass Hamiltonian to represent the coupling between the two spin-split sets of dot levels derived from the lowest InAs electron subband and the highest GaSb heavy hole subband. The FIR response is calculated within the RPA. We show that the interlayer Coulomb interaction between the electrons and the holes combined with the k· p mixing breaks the generalized Kohn's theorem leading to a complex FIR spectrum.
ISSN:1386-9477
1873-1759
DOI:10.1016/S1386-9477(99)00222-2