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Structural and Optical Properties of Zinc Oxide Film Prepared Using RF-Sputtering Technique for Glugose Biosensor

A zinc oxide (ZnO) thin film is fabricated on Si (110) substrate using the radio frequency sputtering technique. The good structural properties of the ZnO thin film on the Si substrate was confirmed via high resolution X-ray diffraction (HRXRD) and by scanning electron microscopy. The photoluminesce...

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Bibliographic Details
Published in:International journal of electrochemical science 2012-12, Vol.7 (12), p.11876-11883
Main Authors: Hashim, A.J., Ghazai, Alaa J., Jaafar, M.S., Mansor, NurAzimah, Zain, ZainiharyatiMohd
Format: Article
Language:English
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Summary:A zinc oxide (ZnO) thin film is fabricated on Si (110) substrate using the radio frequency sputtering technique. The good structural properties of the ZnO thin film on the Si substrate was confirmed via high resolution X-ray diffraction (HRXRD) and by scanning electron microscopy. The photoluminescence (PL) emission study included the optical properties of the ZnO film, and two PL peaks at 371 and 530 nm UV and visible regions were observed. A high oxidation current of 24.6 μM + 1.33 μA was applied at n = 5 of 10 mM H2O on sputtering Si-ZnO at a 0.05V/s scan rate. Glucose oxidase was then immobilized on the ZnO/Si electrode as glucose biosensor, with a limit of detection of 3.33 μM + 1.11 μM (n = 3). Finally, the response current increased linearly with glucose concentration in the range of 500 μM to 2100 μM with a correlation coefficient of 0.998 and a slope of 50 μA μM -1
ISSN:1452-3981
1452-3981
DOI:10.1016/S1452-3981(23)16510-2