Robust polarization switching in self-assembled BiFeO3 nanoislands with quad-domain structures

Miniaturizing ferroic oxides is essential for studying the fundamental physics of low-dimensional topological defects such as flux-closure vortex as well as the applications of future nanoelectronic devices. Here, we successfully synthesized self-assembled BiFeO3 nanoislands on LaAlO3 (001) substrat...

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Bibliographic Details
Published in:Acta materialia 2019-08, Vol.175, p.324-330
Main Authors: Chen, Mingfeng, Ma, Ji, Peng, Ren-Ci, Zhang, Qinghua, Wang, Jing, Liang, Yuhan, Wu, Jialu, Chen, Long-Qing, Ma, Jing, Nan, Ce-Wen
Format: Article
Language:English
Subjects:
BFO nanoislands
Exotic domain structure
Ferroelectric random access memory
Nanoelectronics
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Summary:Miniaturizing ferroic oxides is essential for studying the fundamental physics of low-dimensional topological defects such as flux-closure vortex as well as the applications of future nanoelectronic devices. Here, we successfully synthesized self-assembled BiFeO3 nanoislands on LaAlO3 (001) substrate by pulsed laser deposition. Center-type quad-domains are spontaneously stabilized in these nanostructures, and the polarization vectors of each quarter can be independently switched with robust retention properties over time and elevated temperature. As a result, the long-sought exotic domain structures such as anti-vertex can be created in these nanoislands by selectively switching polarization state of certain quarters. Resistive switching effect is also confirmed in quarters of the nanoisland, indicating the great potential as memory cells in high density ferroelectric random access memory. [Display omitted]
ISSN:1359-6454
1873-2453
DOI:10.1016/j.actamat.2019.06.016