Electrochemical etching of p-type GaN using a tunnel junction for efficient hole injection

In this work electrochemical etching (ECE) of p-type GaN under constant bias without an external light source is demonstrated for the first time. A tunnel junction (TJ) was used as a cap to ensure stable and controllable hole injection to the p-type semiconductor. GaN and In0.02Ga0.98N layers with t...

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Bibliographic Details
Published in:Acta materialia 2022-08, Vol.234, p.118018, Article 118018
Main Authors: Fiuczek, Natalia, Sawicka, Marta, Feduniewicz-Żmuda, Anna, Siekacz, Marcin, Żak, Mikołaj, Nowakowski-Szkudlarek, Krzesimir, Muzioł, Grzegorz, Wolny, Paweł, Kelly, John J., Skierbiszewski, Czesław
Format: Article
Language:English
Subjects:
Electrochemistry
GaN
p-type
Tunnel junction
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Summary:In this work electrochemical etching (ECE) of p-type GaN under constant bias without an external light source is demonstrated for the first time. A tunnel junction (TJ) was used as a cap to ensure stable and controllable hole injection to the p-type semiconductor. GaN and In0.02Ga0.98N layers with two different Mg dopant concentrations (5.6∙1018 and 2∙1019cm−3, respectively) were investigated. Structuring of the samples into double-step stripes allowed examination of the etching mechanism. The etch rate and threshold etching voltage were determined. Finally, a model of the band structure of the etched samples is presented. Based on experimental results and theoretical considerations this work provides a method for controllable ECE of p-type GaN using TJ for efficient hole injection. [Display omitted]
ISSN:1359-6454
1873-2453
DOI:10.1016/j.actamat.2022.118018