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Manganese and copper doped perovskites nanocrystals and their optoelectronic applications
•Mn and Cu doping commonly used synthetic methods.•Stressing the novel properties of Mn & Cu ions dopants in halide perovskites.•Mn and Cu doped perovskites NCs development for high-efficiency solar cells.•Development of high-performance photodetectors due to sensitivity to light. Impurity dopin...
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Published in: | Applied materials today 2023-06, Vol.32, p.101827, Article 101827 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | •Mn and Cu doping commonly used synthetic methods.•Stressing the novel properties of Mn & Cu ions dopants in halide perovskites.•Mn and Cu doped perovskites NCs development for high-efficiency solar cells.•Development of high-performance photodetectors due to sensitivity to light.
Impurity doping has been widely exploited to give semiconductor nanocrystals (NCs) new optical, electrical, and magnetic properties. This review presents a critical overview of recent advances in the doping strategies, properties, and practical applications of transition metals, mainly focusing on Mn- and Cu-doped halide perovskites. We systematically summarized commonly used synthetic methods for Mn and Cu doping, doping-induced variations in structural and optoelectronic properties, and doping engineering in perovskites to optimize optoelectronic device performances, emphasizing the new properties arising from Mn and Cu ions dopants in halide perovskites. Furthermore, this review highlights the potential for using these Mn and Cu doped perovskite materials emphasizing different applications such as Light emitting diode (LEDs), solar cells, photocatalysis, and photodetectors. Key factors are presented, including device performance and architecture, the stabilization mechanism, and the reported performances. In short, this review will highlight recent trends in perovskite doping and will open new avenues of research and exploration in this burgeoning field.
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ISSN: | 2352-9407 2352-9415 |
DOI: | 10.1016/j.apmt.2023.101827 |