Copper chemical vapour deposition on organosilane-treated SiO2 surfaces

Copper thin films were grown on SiO2 substrates by chemical vapour deposition using the precursor (2-methyl-1-hexene-3-yne)Cu(1,1,1,5,5,5-hexafluoroacetylacetonate) ((MHY)Cu(hfac)) and were examined by scanning electron and atomic force microscopy. The affinity for copper chemical vapour deposition...

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Bibliographic Details
Published in:Applied surface science 2004-01, Vol.222 (1-4), p.102-109
Main Authors: Semaltianos, N.G, Pastol, J.-L, Doppelt, P
Format: Article
Language:English
Subjects:
Applied sciences
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Chemical vapour deposition
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Metals. Metallurgy
Methods of deposition of films and coatings
film growth and epitaxy
Organosilane
Physics
Self-assembled monolayers
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:Copper thin films were grown on SiO2 substrates by chemical vapour deposition using the precursor (2-methyl-1-hexene-3-yne)Cu(1,1,1,5,5,5-hexafluoroacetylacetonate) ((MHY)Cu(hfac)) and were examined by scanning electron and atomic force microscopy. The affinity for copper chemical vapour deposition of the substrate surface is higher after the formation of self-assembled monolayers of organosilanes onto the substrate surface. Furthermore, the affinity is greatly enhanced by a subsequent UV light irradiation of the organosilane monolayer, in air, prior to deposition. The dependence of film morphology and statistical surface parameters on substrate temperature and amount of vapour precursor introduced during deposition, provide information for the optimisation of external parameters towards obtaining a thin yet continuous film. Self-assembled monolayers of organosilanes can be used for a selective metallization of SiO2 substrates by copper chemical vapour deposition, in addition to acting as ultrathin barriers which prevent copper diffusion into the SiO2, thus opening a route for a technology useful in microelectronic industrial applications.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2003.08.003