Nitridation of epitaxially grown 6.1 Å semiconductors studied by X-ray photoelectron spectroscopy

We present a detailed analysis of the state of surfaces of the 6.1Å family of semiconductors (InAs, GaSb and AlSb) under exposure to a nitrogen plasma. X-ray photoelectron spectroscopy (XPS) is used to determine the species created at the surface and their relative abundance. We find evidence that c...

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Bibliographic Details
Published in:Applied surface science 2004-01, Vol.222 (1-4), p.6-12
Main Authors: Preisler, E.J, Strittmatter, R.P, McGill, T.C, Hill, C.J
Format: Article
Language:English
Subjects:
Composition and phase identification
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Epitaxial surfaces
Exact sciences and technology
Materials science
Physics
Semiconductors
Surface hardening: nitridation, carburization, carbonitridation
Surface treatments
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
X-ray photoelectron spectroscopy
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Summary:We present a detailed analysis of the state of surfaces of the 6.1Å family of semiconductors (InAs, GaSb and AlSb) under exposure to a nitrogen plasma. X-ray photoelectron spectroscopy (XPS) is used to determine the species created at the surface and their relative abundance. We find evidence that clean epitaxial surfaces exposed to the plasma form both VN (SbN and AsN) and IIIN (AlN, GaN and InN) compounds, but in different amounts and different proportions for each of the materials.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2003.08.017