Deposition mechanism of sputtered amorphous carbon nitride thin film

We report in this study a deposition mechanism that describes the interaction of plasma species with the growing amorphous carbon nitride film (a-CN x ). The samples were deposited by radio frequency (rf) magnetron sputtering on crystalline silicon, under different values of RF power. Plasma charact...

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Bibliographic Details
Published in:Applied surface science 2004-02, Vol.223 (4), p.269-274
Main Authors: Durand-Drouhin, O., Benlahsen, M., Clin, M., Bouzerar, R.
Format: Article
Language:English
Subjects:
Atom
Composition and phase identification
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Deposition by sputtering
Disordered systems
Exact sciences and technology
Ion impact
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecule
Physics
Physics of gases, plasmas and electric discharges
Physics of plasmas and electric discharges
Plasma applications
Surface and interfaces
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Thin films
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Summary:We report in this study a deposition mechanism that describes the interaction of plasma species with the growing amorphous carbon nitride film (a-CN x ). The samples were deposited by radio frequency (rf) magnetron sputtering on crystalline silicon, under different values of RF power. Plasma characterisation was performed using mass spectroscopy (MS) and the influence of the process parameters on the chemical fragmentation of species, present in the plasma, was investigated. Nitrogen incorporation in the a-CN x films was analyzed using nuclear reaction analysis (NRA) measurements correlated with Fourier transform infrared spectroscopy (FTIR) results. The deposition mechanism proposed in this work can well describe surface processes and the resulting composition and chemical bonding of the deposited a-CN x films.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2003.09.017