Equilibrium and non-equilibrium 1/f noise in AlGaN/GaN TLM structures

• Published in: Applied surface science 2004-11, Vol.238 (1-4), p.143-146
• Main Authors: Vitusevich, S.A., Danylyuk, S.V., Petrychuk, M.V., Antoniuk, O.A., Klein, N., Belyaev, A.E.
• Format: Article
• Language: English
• Subjects: 1/f noise; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; Iii-v semiconductors; Noise processes and phenomena; Physics; Semiconductor heterojunction; Surface and interface electron states; Surface states; Two-dimensional electron gas; Wide band gap semiconductors
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2004.05.205

The low frequency noise of AlGaN/GaN transmission line model (TLM) structures has been investigated in a wide temperature range. Deviation of low frequency noise from 1/f dependence has been observed. The results indicate that the structure become more non-linear upon increasing of power. The observed features have been explained as a result of non-equilibrium condition in TLM structures, equilibrium and non-equilibrium noise cases have been studied. The non-equilibrium fluctuations in gateless TLM structures were analysed taking into account the influence of the positive surface charge, formed by polarization effects on dynamics of non-uniform potential redistribution along the channel.