Growth behavior of high k LaAlO 3 films on Si by metalorganic chemical vapor deposition for alternative gate dielectric application

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Bibliographic Details
Published in:Applied surface science 2005-08, Vol.250 (1-4), p.14-20
Main Authors: Shao, Qi-Yue, Li, Ai-Dong, Cheng, Jin-Bo, Ling, Hui-Qin, Wu, Di, Liu, Zhi-Guo, Bao, Yong-Jun, Wang, Mu, Ming, Nai-Ben, Wang, Cathy, Zhou, Hong-Wei, Nguyen, Bich-Yen
Format: Article
Language:English
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ISSN:0169-4332
DOI:10.1016/j.apsusc.2004.12.037