Temperature dependence of the current–voltage characteristics of the Al/Rhodamine-101/p-Si(1 0 0) contacts

• Published in: Applied surface science 2006-01, Vol.252 (6), p.2209-2216
• Main Authors: Karataş, Ş., Temirci, C., Çakar, M., Türüt, A.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Heterojunction; Inhomogeneous barrier height; Organic semiconductor/inorganic semiconductor contacts; Physics; Rectification; Schottky contacts
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2005.03.222

The current–voltage ( I– V) characteristics of Al/Rhodamine-101/p-Si/Al contacts have been measured at temperatures ranging from 280 to 400 K at 20 K intervals. A barrier height (BH) value of 0.817 eV for the Al/Rh101/p-Si/Al contact was obtained at the room temperature that is significantly larger than the value of 0.58 eV of the conventional Al /p-Si Schottky diode. While the barrier height Φ b0 decreases the ideality factors ( n) become larger with lowering temperature. The high values of n depending on the sample temperature may be ascribed to decrease of the exponentially increase rate in current due to space-charge injection into Rh101 thin film at higher voltage. Therefore, at all temperatures, it has been seen that the I– V characteristics show three different regions, the ohmic behavior at low voltages, and the space charge limited current with an exponential distribution of traps at high voltages.