The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity

A new structure of GaAs photocathode was introduced. The Be-doping concentration is variable in the new structure compared with the constant concentration of Be in the normal photocathode. Negative electron affinity GaAs photocathodes were fabricated by alternate input of Cs and O. The spectral resp...

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Bibliographic Details
Published in:Applied surface science 2006-04, Vol.252 (12), p.4104-4109
Main Authors: Wang, X.F., Zeng, Y.P., Wang, B.Q., Zhu, Z.P., Du, X.Q., Li, M., Chang, B.K.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cs:O
Electron and ion emission by liquids and solids
impact phenomena
Exact sciences and technology
GaAs
Iii-v semiconductors
Impact phenomena (including electron spectra and sputtering)
Integrated photosensitivity
Laser-beam impact phenomena
NEA
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Structure
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Summary:A new structure of GaAs photocathode was introduced. The Be-doping concentration is variable in the new structure compared with the constant concentration of Be in the normal photocathode. Negative electron affinity GaAs photocathodes were fabricated by alternate input of Cs and O. The spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathodes with the new structure is enhanced by at least 50% as compared to those with the monolayer structure. Accordingly, two main factors leading to the enhanced photosensitivity of the photocathodes were discussed.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2005.06.017