SIMS analysis of a multiple quantum well structure in a vertical cavity surface emitting laser using the mixing-roughness-information depth model

We have analyzed a multiple quantum well (MQW) structure in a vertical cavity surface emitting laser (VCSEL) epitaxial wafer using secondary ion mass spectrometry (SIMS). The two energy sputtering method is a very powerful method for providing a depth profile of a GaAs/Al 0.2Ga 0.8As MQW with a suff...

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Bibliographic Details
Published in:Applied surface science 2006-07, Vol.252 (19), p.7275-7278
Main Authors: Ootomo, S., Maruya, H., Seo, S., Iwase, F.
Format: Article
Language:English
Subjects:
AFM
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
MRI model
Physics
SIMS
Surface roughening
VCSEL
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Summary:We have analyzed a multiple quantum well (MQW) structure in a vertical cavity surface emitting laser (VCSEL) epitaxial wafer using secondary ion mass spectrometry (SIMS). The two energy sputtering method is a very powerful method for providing a depth profile of a GaAs/Al 0.2Ga 0.8As MQW with a sufficient depth resolution and a large number of data points in a practical measurement time. This method consists of rapid high-energy sputtering for a top mirror layer and subsequent low-energy sputtering for an active layer. The resulting profiles were quantitatively evaluated using the mixing-roughness-information depth (MRI) model. The values of C concentration in modulation-doped Al 0.2Ga 0.8As barrier layers have been extracted from the original in-depth concentration profile reconstructed by the MRI model. The relationship between depth resolution of the resulting profile and surface morphology measured by atomic force microscopy (AFM) is also discussed.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2006.02.261