Electrical gating and rectification in graphene three-terminal junctions

•Graphene three-terminal junctions on semiinsulating silicon carbide were fabricated.•The dependence of the rectification effect on the device geometry is studied.•Electrical gating and amplification is demonstrated. Graphene was grown on semiinsulating silicon carbide at 1800°C and atmospheric argo...

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Bibliographic Details
Published in:Applied surface science 2014-02, Vol.291, p.87-92
Main Authors: Händel, B., Hähnlein, B., Göckeritz, R., Schwierz, F., Pezoldt, J.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Graphene
Physics
Rectification
Silicon carbide
Switch
Three terminal junction
Transistor
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Summary:•Graphene three-terminal junctions on semiinsulating silicon carbide were fabricated.•The dependence of the rectification effect on the device geometry is studied.•Electrical gating and amplification is demonstrated. Graphene was grown on semiinsulating silicon carbide at 1800°C and atmospheric argon pressure. The all carbon T- and Y-shape three terminal junction devices were fabricated using electron beam lithography. All devices featured the negative rectification effect. The exact properties of the devices like the curvature of the output voltage response can be tuned by changing the branch width in the T- and Y-shape devices. Beside the rectification a switching behavior is demonstrated with the same three terminal junctions.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2013.09.066