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An ultraviolet photodetector with an active layer composed of solution processed polyfluorene:Zn0.71Cd0.29S hybrid nanomaterials
•UV-PD device based on the physical structure of ITO/PEDOT:PSS/ADS231BE: 50wt% Zn0.71Cd0.29S/Al is introduced.•Photoresponsivity value of 380mA/W at −4V under 1mW/cm2 illumination at 365nm is obtained.•The polymer and QD forms a non-radiative complex under illumination. An ultraviolet photodetector...
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Published in: | Applied surface science 2014-06, Vol.305, p.227-234 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | •UV-PD device based on the physical structure of ITO/PEDOT:PSS/ADS231BE: 50wt% Zn0.71Cd0.29S/Al is introduced.•Photoresponsivity value of 380mA/W at −4V under 1mW/cm2 illumination at 365nm is obtained.•The polymer and QD forms a non-radiative complex under illumination.
An ultraviolet photodetector with an active layer of solution processed polymer:quantum dot hybrid is introduced. Poly[9,9-di-(2-ethylhexyl)-fluorenyl-2,7-diyl] represents the polymer and Zn0.71Cd0.29S is the quantum dot used for the device. Photophysical studies showed that an electron transfer from the polymer to the ternary quantum dot is thermodynamically favored. Quenching experiments performed between the polymer and quantum dot indicates the formation of a non-fluorescent complex with an association constant of 4.6×104M−1. The device structure of ITO/PEDOT:PSS/ADS231BE: 50wt% Zn0.71Cd0.29S/Al yielded a photoresponsivity value of 324mA/W at −4V under 1mW/cm2 illumination at 365nm at room temperature and this value is further increased to 380mA/W as a result of annealing at 75°C. |
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ISSN: | 0169-4332 1873-5584 |
DOI: | 10.1016/j.apsusc.2014.03.042 |