Effect of residual H 2 O on epitaxial AlN film growth on 4H-SiC by alternating doses of TMA and NH 3

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Bibliographic Details
Published in:Applied surface science 2014-09, Vol.314, p.1047-1052
Main Authors: Perng, Ya-Chuan, Kim, Taeseung, Chang, Jane P.
Format: Article
Language:English
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ISSN:0169-4332
DOI:10.1016/j.apsusc.2014.06.041