Double-layer stepped Si(1 0 0) surfaces prepared in As-rich CVD ambience

• Published in: Applied surface science 2018-12, Vol.462, p.1002-1007
• Main Authors: Paszuk, Agnieszka, Supplie, Oliver, Nandy, Manali, Brückner, Sebastian, Dobrich, Anja, Kleinschmidt, Peter, Kim, Boram, Nakano, Yoshiaki, Sugiyama, Masakazu, Hannappel, Thomas
• Format: Article
• Language: English
• Subjects: Arsenic; III-V-on-silicon; Metalorganic chemical vapor deposition; Optical in situ spectroscopy; Si(1 0 0) surface
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2018.07.181

[Display omitted] •Both (1 × 2) and (2 × 1) reconstructed Si(1 0 0):As surfaces can be prepared by MOCVD.•In situ RAS enables detailed process control even at elevated temperatures.•Si:As surface reactions strongly depend on the Si(1 0 0) substrate misorientation.•Atomically flat low-offcut Si(1 0 0):As-(1 × 2) surfaces with regular double-layer steps.•Arsenic atoms are considered to replace Si atoms during the adsorption process. Low-defect III-V integration on Si(1 0 0) requires atomically well-ordered heterointerfaces. To this end, we study the interaction of As with Si(1 0 0) surfaces and the formation of dimerized Si(1 0 0):As surfaces in situ with reflection anisotropy spectroscopy during metalorganic chemical vapor deposition (MOCVD). Control of surface processes allows us to intentionally ‘rotate’ the dimer orientation and choose between predominantly (1 × 2) and (2 × 1) reconstructed Si(1 0 0):As surfaces both for low and higher surface misorientation. We also verify that the (2 × 1) surface reconstruction becomes energetically more favorable for vicinal Si(1 0 0):As surfaces. We explain the preparation of Si(1 0 0):As surfaces displaying an almost single-domain, (1 × 2) reconstructed surface with an RMS roughness ≤1 Å and exhibiting broad, atomically flat terraces as well as regular double-layer steps. This surface is highly suitable for subsequent low-defect III-V integration.