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Underpotential co-deposition of ternary Cu-Te-Se semiconductor nanofilm on both flexible and rigid substrates

[Display omitted] •UPCD of ternary Cu-Te-Se compounds was accomplished on both flexible and rigid substrates.•The Cu3Te2Se2 nanofilm was deposited on ITO-PET flexible substrate with high homogeneity within 6 min.•The band gaps of the grown nanofilm were obtained in the range of 2.72 eV and 3.55 eV.•...

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Bibliographic Details
Published in:Applied surface science 2019-03, Vol.470, p.658-667
Main Authors: Aydın, Zehra Yazar, Malekghasemi, Soheil, Abaci, Serdar
Format: Article
Language:English
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Summary:[Display omitted] •UPCD of ternary Cu-Te-Se compounds was accomplished on both flexible and rigid substrates.•The Cu3Te2Se2 nanofilm was deposited on ITO-PET flexible substrate with high homogeneity within 6 min.•The band gaps of the grown nanofilm were obtained in the range of 2.72 eV and 3.55 eV.•I-V characterizations of the Cu3Te2Se2 nanofim were calculated.•Cu3Te2Se2/ITO heterojunctions were determined to comply with the diode model. To achieve homogeneous ternary compounds, the growth rates of the component species in a solution must be equal and the processes must be simultaneous. The conditions necessary for the growth of one species should not prevent the growth of the others. Herein we present a synthesis of Cu3Te2Se2 semiconductor nanofilms on indium tin oxide (ITO)-coated polyethylene terephthalate (ITO-PET), ITO-coated glass, and Au plate substrates by an electrochemical underpotential co-deposition (UPCD) method from the same solution at a constant potential. The chemical, morphological, and optical properties of the synthesized nanofilms were determined by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, ultraviolet–visible absorption spectroscopy (UV/Vis), and current-voltage (I-V) studies. The chemical formula of the deposited nanofilms was confirmed as Cu3Te2Se2 by X-ray photoelectron spectroscopy. The SEM images exhibited uniform nano-scale (∼40 nm) distribution of the Cu3Te2Se2 nanofilms. The band gaps of the deposited films were determined according to the different deposition times and potentials. The XRD results showed crystalline and single-phase forms of Cu3Te2Se2 nanofilm. Finally, the I-V curves of the Cu3Te2Se2/ITO heterojunctions at room temperature (RT) under normal light conditions indicated matched those of a diode model.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2018.11.110