Isoelectronic indium doping for thermoelectric enhancements in BiCuSeO

•Isoelectronic indium doping in BiCuSeO has been investigated.•Isoelectronic indium doping could enhance the mobility of BiCuSeO.•ZT of BiCuSeO is increased ̃30% at 800 K using isoelectronic indium doping method. Thermoelectric properties of BiCuSeO have been finely tuned previously by doping cation...

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Bibliographic Details
Published in:Applied surface science 2019-04, Vol.473, p.985-991
Main Authors: Lei, Jingdan, Guan, Weibao, Zhang, De, Ma, Zheng, Yang, Xiaoyun, Wang, Chao, Wang, Yuanxu
Format: Article
Language:English
Subjects:
BiCuSeO
Isoelectronic doping
Thermoelectric properties
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Summary:•Isoelectronic indium doping in BiCuSeO has been investigated.•Isoelectronic indium doping could enhance the mobility of BiCuSeO.•ZT of BiCuSeO is increased ̃30% at 800 K using isoelectronic indium doping method. Thermoelectric properties of BiCuSeO have been finely tuned previously by doping cations on bismuth sites. Here thermoelectric properties of BiCuSeO with isoelectronic indium doping were investigated by experimental methods detailedly. We found that electrical conductivity was remarkably enhanced by isoelectronic indium doping in BiCuSeO system, which resulted from about sixfold increase of carrier mobility from 5.6 cm2 v−1 s−1 to 31 cm2 v−1 s−1 at room temperature. Furthermore, we obtained a maximum power factor up to 4.6 μW cm−1 K−2 in isoelectronic indium doping BiCuSeO at 800 K. Finally, the dimensionless thermoelectric figure of merit reached ∼ 0.6 at 800 K in Bi0.925In0.075CuSeO.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2018.12.231