One-step synthesis of centimeter-size alpha-MoO3 with single crystallinity
By utilizing the convenient physical vapor deposition procedure, a simple and low-cost synthesis route is developed to fabricate high-quality orthorhombic MoO3 crystals with single crystallinity and significant size (bigger than 10 mm × 10 mm2). A combined characterization techniques of atomic force...
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Published in: | Applied surface science 2019-05, Vol.476, p.789-795 |
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Main Authors: | , , , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | By utilizing the convenient physical vapor deposition procedure, a simple and low-cost synthesis route is developed to fabricate high-quality orthorhombic MoO3 crystals with single crystallinity and significant size (bigger than 10 mm × 10 mm2). A combined characterization techniques of atomic force microscopy, X-ray photoelectron spectroscopy, synchrotron-based X-ray diffraction and Raman spectroscopy confirm the high quality of α-MoO3 crystal from the point view of both electronic and physical structures. Compared to previous reports in literature, we demonstrate herein a rather simplified one-step approach with only the MoO3 powder needed. In the end, corresponding electrochromic performance has also been tested which reveals high transmittance and remarkable optical properties which may broadens the potential applications of MoO3 single crystal in nanosensors, nanoelectronics and so on.
PVD growth of centimeter-size MoO3 single crystal with appealing properties. [Display omitted]
•A low-cost simplified approach is demonstrated to fabricate high-quality orthorhombic MoO3 single crystal with significant size (10×10 mm2).•Layers with a least thickness of 0.7nm and micrometers width have been demonstrated, which is promising to facilitate veritable 2D MoO3 sheet.•With the potential appealing application, the high performance of synthesized crystals on optical modulation and conductivity has been claimed. |
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ISSN: | 0169-4332 1873-5584 |
DOI: | 10.1016/j.apsusc.2019.01.169 |